Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission

Metal organic chemical vapor deposition of AlGaAs on GaAs nominal 300 mm (001) Si was studied using selective epitaxial growth. Growth and structural characterization layers formed structures is presented. with different compositions were fabricated top faceted structures. Energy Dispersive X-ray spectra investigated to characterize the structure. It found that growth for red optical emission needs careful temperature tuning. Indeed, show steep compositional variations depending crystallographic planes they are grown upon. Cathodoluminescence revealed quantum well best simpler rectangular shaped underlying Thus, obtained could be excellent candidates future emitters directly integrated a silicon wafer platform.